Bulk and Interface effects on voltage linearity of ZrO2 - SiO2 multilayered metal-insulator-metal capacitors for analog mixed-signal applications

Applied Physics Letters

Volumn 95, Issue 2, 2009, Pages

  Park, C ^a   Park, S D ^c   Gilmer, D C ^a   Park, H K ^a   Kang, C Y ^a   Lim, K Y ^a   Burham, C ^a   Barnett, J ^a   Kirsch, P D ^a   Tseng, H H ^a   Jammy, R ^a   Yeom, G Y ^b  

^a SEMATECH   (United States)

^b Sungkyunkwan University   (South Korea)

^c NONE

Author keywords

[No Author keywords available]

Indexed keywords

APPLIED VOLTAGES; BULK DIELECTRIC; DIELECTRIC THICKNESS; INTERFACE EFFECT; METAL-INSULATOR-METAL CAPACITORS; MIXED SIGNAL APPLICATIONS; MULTI-LAYERED; STACKING SEQUENCE; VOLTAGE COEFFICIENT OF CAPACITANCES; VOLTAGE LINEARITY;

CAPACITANCE; CAPACITORS; ELECTRIC POTENTIAL; METAL INSULATOR BOUNDARIES; METALS; MIM DEVICES; SEMICONDUCTOR INSULATOR BOUNDARIES; SILICON COMPOUNDS; ZIRCONIUM ALLOYS;

DIELECTRIC MATERIALS;

EID: 67650763671     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3182856     Document Type: Article

References (14)

1. X. F. Yu, C. X. Zhu, H. Hu, A. Chin, M. F. Li, B. J. Cho, D.-L. Kwong, P. D. Foo, and M. B. Yu, IEEE Electron Device Lett. 0741-3106 24, 63 (2003). 10.1109/LED.2002.808159
2. K. Takeda, T. Ishikawa, T. Mine, T. Imai, and T. Fujiwara, Jpn. J. Appl. Phys., Part 1 0021-4922 46, 2973 (2007). 10.1143/JJAP.46.2973
3. The International Technology Roadmap for Semiconductors: Semicond. Assoc. Ind., 2007.
4. C. H. Ng, C. S. Ho, S. F. S. Chu, and S. C. Sun, IEEE Trans. Electron Devices 0018-9383 52, 1399 (2005). 10.1109/TED.2005.850642
5. T. Iida, M. Nakahara, S. Gotoh, and H. Akida, Proceedings of the IEEE Custom Integration Circuits Conference, 1990 (unpublished), p. 18.5.1.
6. Y. K. Jeong, S. J. Won, D. J. Kwon, M. W. Song, W. H. Kim, O. H. Park, J. H. Jeong, H. S. Oh, H. K. Kang, and K. P. Suh, VLSI Tech. Dig. Tech. 2004, 222.
7. Y. L. Tu, H. L. Lin, L. L. Chao, D. Wu, C. S. Tsai, C. Wang, C. F. Huang, C. H. Lin, and J. Sun, VLSI Tech. Dig. Tech. 2003, 79. 0741-3106
8. T. Ishikawa, D. Kodama, Y. Matsui, M. Hiratani, T. Furusawa, and D. Hisamoto, Tech. Dig.-Int Electron Devices Meet. 2002, 940. 0018-9383
9. H. Hang, S. J. Ding, H. F. Lim, C. X. Zhu, M. F. Li, S. J. Kim, X. F. Yu, J. H. Chen, Y. F. Yong, B. J. Cho, D. S. H. Chan, S. C. Rustagi, M. B. Yu, C. H. Tung, A. Y. Du, D. My, P. D. Foo, A. Chin, and D. L. Kwong, Tech. Dig.-Int Electron Devices Meet. 2003, 15.6.1. 0018-9383
10. S. J. Kim, B. J. Cho, M. F. Li, S. J. Ding, C. Zhu, M. B. Yu, B. Narayanan, A. Chin, and D. L. Kwong, IEEE Electron Device Lett. 0741-3106 25, 538 (2004). 10.1109/LED.2004.832785
11. S. Blonkowski, M. Regache, and A. Halimaoui, J. Appl. Phys. 0021-8979 90, 1501 (2001). 10.1063/1.1381043
12. S. B́cu, S. Cŕmer, and J. L. Autran, Appl. Phys. Lett. 0003-6951 88, 052902 (2006). 10.1063/1.2170137
13. P. Gonon and C. Valĺe, Appl. Phys. Lett. 0003-6951 90, 142906 (2007). 10.1063/1.2719618
14. S. M. Sze, Physics of Semiconductor Devices (Wiley, New York, 1998).