Characterization of laminated CeO2-HfO2 high-k gate dielectrics grown by pulsed laser deposition

Journal of the Electrochemical Society

Volumn 153, Issue 10, 2006, Pages

  Karakaya, K ^a   Zinine, A ^a   Van Berkum, J G M ^b   Verheijen, M A ^b   Rittersma, Z M ^c   Rijnders, G ^a   Blank, D H A ^a  

^a UNIVERSITY OF TWENTE   (Netherlands)

^b PHILIPS RESEARCH LABORATORIES   (Netherlands)

^c NXP SEMICONDUCTORS   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DIELECTRIC MATERIALS; ELECTRIC PROPERTIES; ELECTRODES; LAMINATES; LAMINATING; PERMITTIVITY; PULSED LASER DEPOSITION; SPUTTERING;

DEPOSITION TEMPERATURES; NAMOLAMINATES; POSTDEPOSITION; SUBSTRATE TEMPERATURES;

CERIUM COMPOUNDS;

EID: 33748433654     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2266454     Document Type: Article

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