Surface control of bottom electrode in ultra-thin SiN metal-insulator-metal decoupling capacitors for high speed processors

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 46, Issue 4 B, 2007, Pages 1968-1973

  Inoue, Naoya ^a   Kume, Ippei ^a   Kawahara, Jun ^a   Saito, Shinobu ^a   Furutake, Naoya ^a   Toda, Takeshi ^b   Matsui, Koichiro ^b   Iwaki, Takayuki ^b   Furumiya, Masayuki ^b   Shinmura, Toshiki ^b   Ohto, Koichi ^b   Hayashi, Yoshihiro ^a  

^a NEC CORPORATION   (Japan)

^b RENESAS TECHNOLOGY CORP   (Japan)

Author keywords

Capacitor; Decoupling; MIM; Reliability; Roughness

Indexed keywords

CAPACITORS; ELECTRODES; ETCHING; GATE DIELECTRICS; SILICON NITRIDE; TITANIUM NITRIDE; ULTRATHIN FILMS;

BOTTOM ELECTRODES; DECOUPLING; METAL INSULATOR METAL (MIM) CAPACITORS;

MIM DEVICES;

EID: 34547900749     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.46.1968     Document Type: Article

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