Sequential lateral solidification processing for polycrystalline Si TFTs

IEEE Transactions on Electron Devices

Volumn 51, Issue 4, 2004, Pages 560-568

  Crowder, Mark A ^a   Voutsas, A Tolis ^a   Droes, Steven R ^a   Moriguchi, Masao ^b   Mitani, Yasuhiro ^b  

^a SHARP LABORATORIES OF AMERICA   (United States)

^b SHARP CORPORATION   (Japan)

Author keywords

Sequential lateral solidification (SLS); Thin film transistors (TFTs)

Indexed keywords

AMORPHOUS MATERIALS; CRYSTAL MICROSTRUCTURE; CRYSTALLIZATION; EXCIMER LASERS; GRAIN BOUNDARIES; POLYCRYSTALLINE MATERIALS; SOLIDIFICATION; SUBSTRATES; THIN FILM TRANSISTORS; THIN FILMS;

PLANARIZATION; PROCESS THINNING; SEQUENTIAL LATERAL SOLIDIFICATION;

SILICON;

EID: 1942519866     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2004.823795     Document Type: Article

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