Roughness reduction in polycrystalline silicon thin films formed by continuous-wave laser lateral crystallization with Cap SiO2 thin films

Japanese Journal of Applied Physics

Volumn 48, Issue 4 PART 2, 2009, Pages

  Fujii, Shuntaro ^a   Kuroki, Shin Ichiro ^a   Numata, Masayuki ^a   Kotani, Koji ^a   Ito, Takashi ^a  

^a TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON (A-SI); ANTI-REFLECTION EFFECTS; CONTINUOUS WAVES; CRYSTALLIZATION CONDITIONS; CW LASER CRYSTALLIZATION; POLY-SI THIN FILM; POLYCRYSTALLINE SILICON (POLY-SI); POLYCRYSTALLINE SILICON THIN FILM;

AMORPHOUS FILMS; AMORPHOUS SILICON; CRYSTALLIZATION; POLYCRYSTALLINE MATERIALS; POLYSILICON; SILICON OXIDES; THIN FILMS; VAPOR DEPOSITION;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 77952491522     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.48.04C129     Document Type: Article

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