Characterization of novel polycrystalline silicon thin-film transistors with long and narrow grains

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 45, Issue 3 A, 2006, Pages 1489-1494

  Nakazaki, Yoshiaki ^b   Kawachi, Genshiro ^a   Jyumonji, Masayuki ^c   Ogawa, Hiroyuki ^d   Hiramatu, Masato ^b   Azuma, Kazufumi ^a   Warabisako, Terunori ^a   Matsumura, Masakiyo ^a  

^a Advanced LCD Technologies Development Center Co Ltd   (Japan)

^b Japan Display Inc   (Japan)

^c NEC CORPORATION   (Japan)

^d SHARP CORPORATION   (Japan)

Author keywords

Channel location; Crystallization; Grain boundary; Lateral growth; Phase modulated excimer laser annealing; PMELA; Poly Si; TFT

Indexed keywords

ANNEALING; CRYSTALLIZATION; ELECTRON MOBILITY; EXCIMER LASERS; GAIN CONTROL; GRAIN BOUNDARIES; POLYSILICON;

CHANNEL LOCATION; LATERAL GROWTH; PHASE-MODULATED EXCIMER LASER ANNEALING;

THIN FILM TRANSISTORS;

EID: 33644882818     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.45.1489     Document Type: Article

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