Memory properties of a ferroelectric gate field-effect transistor with an adjoining metal-ferroelectric-metal assistance cell

Journal of Applied Physics

Volumn 94, Issue 4, 2003, Pages 2559-2562

  Xiong, Sibei ^a,b   Sakai, Shigeki ^a   Ishii, Kenichi ^a   Migita, Shinji ^a   Sakamaki, Kazuo ^a   Ota, Hiroyuki ^a   Suzuki, Elichi ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b PANASONIC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; FERROELECTRIC DEVICES; FILMS; INTERFACES (MATERIALS); METAL INSULATOR BOUNDARIES; NONVOLATILE STORAGE; NUCLEATION; SEMICONDUCTOR INSULATOR BOUNDARIES; SWITCHING;

DRAIN CURRENTS;

FIELD EFFECT TRANSISTORS;

EID: 0041922636     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1592606     Document Type: Article

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