Analysis of threshold voltage shift of pentacene field effect transistor with ferroelectric gate insulator as a Maxwell-Wagner effect

Thin Solid Films

Volumn 516, Issue 9, 2008, Pages 2753-2757

  Tamura, Ryousuke ^a   Lim, Eunju ^a   Yoshita, Shuhei ^a   Manaka, Takaaki ^a   Iwamoto, Mitsumasa ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Ferroelectric; Maxwell Wagner model; Organic field effect transistor

Indexed keywords

FERROELECTRIC MATERIALS; FIELD EFFECT TRANSISTORS; GATE DIELECTRICS;

FERROELECTRIC GATE INSULATOR; GATE INSULATORS; MAXWELL WAGNER MODEL; ORGANIC FIELD EFFECT TRANSISTOR;

THRESHOLD VOLTAGE;

EID: 39449101498     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2007.04.106     Document Type: Article

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