Understanding the inversion-layer properties of the 4H-SiC/SiO2 interface

Materials Science Forum

Volumn 679-680, Issue , 2011, Pages 318-325

  Matocha, Kevin ^a   Tilak, Vinayak ^a  

^a GE GLOBAL RESEARCH   (United States)

Author keywords

Interface; Inversion layer mobility; Mobility; MOSFETs; Scattering mechanisms

Indexed keywords

CARRIER MOBILITY; ELECTRIC FIELDS; ELECTROMAGNETIC WAVE SCATTERING; INTERFACES (MATERIALS); INVERSION LAYERS; POWER MOSFET; SILICA; SILICON CARBIDE; SILICON OXIDES; SURFACE ROUGHNESS; THRESHOLD VOLTAGE;

DENSITY OF INTERFACE STATE; ELECTRICAL PERFORMANCE; MOSFETS; SCATTERING MECHANISMS; SIC-SIO2 INTERFACE; SIC/SIO2-INTERFACES; SURFACE ELECTRIC FIELDS; SURFACE ROUGHNESS SCATTERING;

INTERFACE STATES;

EID: 79955113871     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.679-680.318     Document Type: Conference Paper

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