4H-SiC power metal-oxide-semiconductor field effect transistors and schottky barrier diodes of 1.7 kV rating

Japanese Journal of Applied Physics

Volumn 48, Issue 4 PART 2, 2009, Pages

  Miura, Naruhisa ^a   Yoshida, Shohei ^a   Nakao, Yukiyasu ^a   Matsuno, Yoshinori ^a   Kuroda, Ken Ichi ^a   Watanabe, Shoyu ^a   Imaizumi, Masayuki ^a   Sumitani, Hiroaki ^a   Yamamoto, Hidekazu ^a   Oomori, Tatsuo ^a  

^a MITSUBISHI ELECTRIC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AVALANCHE BREAKDOWN; DRIFT LAYERS; DYNAMIC CHARACTERIZATION; JUNCTION TERMINATION; METAL OXIDE SEMICONDUCTOR FIELD-EFFECT TRANSISTORS; MOS-FET; MOSFETS; ON-RESISTANCE; STATIC CHARACTERISTIC; SWITCHING CONDITIONS; SWITCHING LOSS; TEMPERATURE DEPENDENCE;

DIELECTRIC DEVICES; ELECTRIC BREAKDOWN; FIELD EFFECT TRANSISTORS; MOS DEVICES; MOSFET DEVICES; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR DIODES; SILICON CARBIDE;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 77952536329     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.48.04C085     Document Type: Article

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