A quasi-two-dimensional depth-dependent mobility model suitable for device simulation for Coulombic scattering due to interface trapped charges

Journal of Applied Physics

Volumn 100, Issue 4, 2006, Pages

  Potbhare, Siddharth ^a   Goldsman, Neil ^a   Pennington, Gary ^a   Lelis, Aivars ^b   McGarrity, James M ^c  

^a UNIVERSITY OF MARYLAND   (United States)

^b U S ARMY RESEARCH LABORATORY   (United States)

^c Berkeley Research Association   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CONDUCTION CHARGE; COULOMB INTERACTION; COULOMBIC SCATTERING; MOBILE CHARGES;

COULOMB BLOCKADE; CURRENT VOLTAGE CHARACTERISTICS; ELECTRON TRAPS; MOSFET DEVICES; SILICON CARBIDE;

ELECTRON SCATTERING;

EID: 33748323440     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2335673     Document Type: Article

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