Controlled in situ n-doping of silicon nanowires during VLS growth and their characterization by scanning spreading resistance microscopy

Journal of Physical Chemistry C

Volumn 114, Issue 2, 2010, Pages 760-765

  Celle, Caroline ^a   Mouchet, Céline ^a   Rouvière, Emmanuelle ^a   Simonato, Jean Pierre ^a   Mariolle, Denis ^a   Chevalier, Nicolas ^a   Brioude, Arnaud ^b  

^a CEA GRENOBLE   (France)

^b UNIVERSITÉ CLAUDE BERNARD LYON 1   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL ACTIVATION; DOPING (ADDITIVES); PHOSPHORUS COMPOUNDS; SCANNING ELECTRON MICROSCOPY; SILICON; SUBSTRATES;

COMPLEMENTARY TECHNIQUES; CVD REACTORS; DOPING LEVELS; GROWTH SUBSTRATES; SCANNING SPREADING RESISTANCE MICROSCOPY; SILICON NANOWIRES; THERMAL ACTIVATION; VERTICAL STRUCTURES;

NANOWIRES;

EID: 75449106778     PISSN: 19327447     EISSN: 19327455     Source Type: Journal    
DOI: 10.1021/jp9094326     Document Type: Article

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