GaN-nanowire/amorphous-Si core-shell heterojunction diodes

Applied Physics Letters

Volumn 93, Issue 19, 2008, Pages

  Motayed, Abhishek ^a   Davydov, Albert V ^a  

^a NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BORON; CORUNDUM; DIODES; ELECTRIC WIRE; ELECTROPHORESIS; ETCHING; GALLIUM ALLOYS; GALLIUM NITRIDE; NANOSTRUCTURED MATERIALS; NANOSTRUCTURES; NANOWIRES; NITRIDES; PLASMA DEPOSITION; PLASMA DIODES; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; PLASMA ETCHING; PLASMAS; SEMICONDUCTING GALLIUM; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DIODES; SHELLS (STRUCTURES); SILICON;

CORE SHELLS; DIELECTROPHORESIS; ELECTRICAL CHARACTERISTICS; ELECTRICAL CHARACTERIZATIONS; GAN NANOWIRES; HETEROJUNCTION DIODES; INTERBAND TUNNELING; METAL DEPOSITIONS; NEGATIVE DIFFERENTIAL RESISTANCES; SAPPHIRE SUBSTRATES; SHELL FORMATIONS; SI SHELLS; SPIN-ON;

AMORPHOUS SILICON;

EID: 56249091390     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3021390     Document Type: Article

References (14)

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9. Certain commercial equipments or material suppliers are identified in this paper for describing experimental procedure adequately. This does not imply endorsement by NIST.
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