Formation of Schottky-type metal/SrTiO3 junctions and their resistive properties

Applied Physics A: Materials Science and Processing

Volumn 100, Issue 2, 2010, Pages 437-445

  Stöcker, Hartmut ^a,b   Zschornak, Matthias ^a,b   Seibt, Juliane ^b   Hanzig, Florian ^b   Wintz, Susi ^b   Abendroth, Barbara ^b   Kortus, Jens ^b   Meyer, Dirk C ^b  

^a DRESDEN UNIVERSITY OF TECHNOLOGY   (Germany)

^b TU BERGAKADEMIE FREIBERG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CONTACT BEHAVIOR; ERASE OPERATION; MEMORY CELL; METAL/OXIDE INTERFACE; NON-VOLATILE; RESISTANCE CHANGE; RESISTIVE SWITCHING; SCHOTTKY; SRTIO; STRONTIUM TITANATE;

CURRENT VOLTAGE CHARACTERISTICS; DOPING (ADDITIVES); ELECTRIC FIELDS; OXYGEN; SEMICONDUCTOR STORAGE; STRONTIUM; STRONTIUM TITANATES; SWITCHING SYSTEMS; VACANCIES;

OXYGEN VACANCIES;

EID: 79953876472     PISSN: 09478396     EISSN: 14320630     Source Type: Journal    
DOI: 10.1007/s00339-010-5848-0     Document Type: Article

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