Difference of oxide hetero-structure junctions with semiconductor electronic devices

Chinese Physics Letters

Volumn 25, Issue 9, 2008, Pages 3378-3380

  Xiong, Guang Cheng ^a   Chen, Yuan Sha ^a   Chen, Li Ping ^a   Lian, Gui Jun ^a  

^a PEKING UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CALCIUM COMPOUNDS; CERIUM OXIDE; CHARGE CARRIERS; FUNCTIONAL MATERIALS; INTERFACES (MATERIALS); MANGANESE COMPOUNDS; MICROELECTRONICS; SEMICONDUCTOR JUNCTIONS;

CHARGE CARRIER INJECTION; INJECTED CARRIERS; INTERFACE BARRIER; OXYGEN DEFICIENT; PROPERTY; RESISTANCE SWITCHING; SELF-TRAPPING; SEMICONDUCTOR ELECTRONIC DEVICES;

ELECTRIC FIELDS;

EID: 56349118908     PISSN: 0256307X     EISSN: 17413540     Source Type: Journal    
DOI: 10.1088/0256-307X/25/9/076     Document Type: Article

References (11)

1. Asamitsu A et al 1997 Nature 388 50
2. Hu F X and Gao J 2004 Phys. Rev. B 69 212413
3. Masuno A et al 2004 Appl. Phys. Lett. 85 6194
4. Jain H et al 2006 Appl. Phys. Lett. 89 152116
5. Liu S Q et al 2000 Appl. Phys. Lett. 76 2749
6. Beck A et al 2000 Appl. Phys. Lett. 77 139
7. Nakamura A et al 2003 Nature Mater. 2 453
8. Kim D S et al 2006 Phys. Rev. B 74 174430
9. Song X F et al 2005 Phys. Rev. B 71 214427
10. Carles A L et al 1998 Appl. Phys. Lett. 72 3065
11. Yoshida A et al 1991 J. Appl. Phys. 70 4976