Comparative study of the growth of sputtered aluminum oxide films on organic and inorganic substrates

Thin Solid Films

Volumn 516, Issue 18, 2008, Pages 6377-6381

  Sellner, Stefan ^a,b,c   Gerlach, Alexander ^c,d   Kowarik, Stefan ^c,d   Schreiber, Frank ^c,d   Dosch, Helmut ^a,b   Meyer, Stephan ^b   Pflaum, Jens ^b   Ulbricht, Gerhard ^e  

^a MAX PLANCK INSTITUTE FOR INTELLIGENT SYSTEMS   (Germany)

^b UNIVERSITY OF STUTTGART   (Germany)

^c UNIVERSITY OF TÜBINGEN   (Germany)

^d UNIVERSITY OF OXFORD   (United Kingdom)

^e MAX PLANCK INSTITUT FÜR FESTKÖRPERFORSCHUNG   (Germany)

Author keywords

AFM; Aluminum oxide; Growth; Roughness; X ray reflectivity

Indexed keywords

ALUMINUM COMPOUNDS; GROWTH RATE; HETEROJUNCTIONS; SUBSTRATES; SURFACE ROUGHNESS; X RAY OPTICS;

ALUMINUM OXIDE; INORGANIC SUBSTRATES; X-RAY REFLECTIVITY;

OXIDE FILMS;

EID: 44649107135     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2007.12.151     Document Type: Article

References (39)

1. Rippard W.H., Perrella A.C., Albert F.J., and Buhrman R.A. Phys. Rev. Lett. 88 (2002) 046805
2. Padture N.P., Gell M., and Jordan E.H. Science 296 (2002) 280
3. Stierle A., Renner F., Streitel R., Dosch H., Drube W., and Cowie B.C. Science 303 (2004) 1652
4. Park S.H.K., Oh J., Hwang C.S., Lee J.I., Yang Y.S., Chu H.Y., and Kang K.Y. ETRI J. 27 (2005) 545
5. Chwang A.B., Rothman M.A., Mao S.Y., Hewitt R.H., Weaver M.S., Silvernail J.A., Rajan K., Hack M., Brown J.J., Chu X., Moro L., Krajewski T., and Rutherford N. Appl. Phys. Lett. 83 (2003) 413
6. Voigt M., and Sokolowski M. Mater. Sci. Eng. B 109 (2004) 99
7. Krug J. Adv. Phys. 46 (1997) 139
8. Pimpinelli A., and Villain J. Physics of Crystal Growth, Monographs and Texts in Statistical Physics (1999), Cambridge University Press
9. Barabasi A.L., and Stanley H.E. Fractal Concepts in Surface Growth (1995), Cambridge University Press
10. Family F., and Vicsek T. J. Phys. A: Math. Gen. 18 (1985) L75
11. Family F. Physica, A 168 (1990) 561
12. Family F. J. Phys. A: Math. Gen 19 (1986) L441
13. Kardar M., Parisi G., and Zhang Y.C. Phys. Rev. Lett. 56 (1986) 889
14. Wolf E.D., and Villain J. Europhys. Lett. 13 (1990) 389
15. Jullien R., and Botet R. J. Phys. A: Math. Gen. 18 (1985) 2279
16. Krug J., and Meakin P. Phys. Rev. Lett. 66 (1991) 703
17. Lai Z.W., and Sarma S.D. Phys. Rev. Lett. 66 (1991) 2348
18. Tang L.H., and Nattermann T. Phys. Rev. Lett. 66 (1991) 2899
19. Dürr A.C., Schreiber F., Ritley K.A., Kruppa V., Krug J., Dosch H., and Struth B. Phys. Rev. Lett. 90 (2003) 016104
20. Auger M.A., Vazquez L., Sanchez O., Jergel M., Cuerno R., and Castro M. J. Appl. Phys. 97 (2005) 123528
21. Lindstrom T., Isidorsson J., and Niklasson G.A. Thin Solid Films 401 (2001) 165
22. He Y.L., Yang H.N., Lu T.M., and Wang G.C. Phys. Rev. Lett. 69 (1992) 3770
23. Thompson C., Palasantzas G., Feng Y.P., Sinha S.K., and Krim J. Phys. Rev. B 49 (1994) 4902
24. You H., Chiarello R.P., Kim H.K., and Vandervoort K.G. Phys. Rev. Lett. 70 (1993) 2900
25. Wang J., Li G., Yang P., Cui M., Jiang X., Dong B., and Liu H. Europhys. Lett. 42 (1998) 283
26. Collins G.W., Letts S.A., Fearon E.M., McEachern R.L., and Bernat T.P. Phys. Rev. Lett. 73 (1994) 708
27. Ernst H.J., Fabre F., Folkerts R., and Lapujoulade J. Phys. Rev. Lett. 72 (1994) 112
28. Dürr A.C., Schreiber F., Münch M., Karl N., Krause B., Kruppa V., and Dosch H. Appl. Phys. Lett. 81 (2002) 2276
29. Kowarik S., Gerlach A., Sellner S., Schreiber F., Cavalcanti L., and Konovalov O. Phys. Rev. Lett. 96 (2006) 125504
30. Dürr A.C., Schreiber F., Münch M., Krause B., Kruppa V., and Dosch H. Adv. Mater. 14 (2002) 961
31. Sellner S., Gerlach A., Schreiber F., Kelsch M., Kasper N., Dosch H., Meyer S., Pflaum J., Fischer M., and Gompf B. Adv. Mater. 16 (2004) 1750
32. Sellner S., Gerlach A., Schreiber F., Kelsch M., Kasper N., Dosch H., Meyer S., Pflaum J., Fischer M., Gompf B., and Ulbricht G. J. Mater. Res. 21 (2006) 455
33. Meyer S., Sellner S., Schreiber F., Dosch H., Ulbricht G., Fischer M., Gompf B., and Pflaum J. Mater. Res. Soc. Symp. Proc. 965E (2007) 6
34. The measurements were carried out with He+ ions of 1 MeV at the Dynamitron in Stuttgart. The RBS-chamber has an IBM-geometry (i.e., the detector is located at θ = 165° scattering angle in the same plane as the beam and the sample normal) with a detector resolution of 14 keV.
35. Parratt L.G. Phys. Rev. 95 (1954) 359
36. x in Fig. 2(a) shows oscillations which do not correspond to the thickness oscillations of a 5800 Å thick aluminum oxide film. During preparation of this specific film the sputtering process was interrupted to cool down the sputtering target. After restarting sputtering the preparation conditions might have changed slightly. The reflectivity curve could be fitted using a model with two aluminum oxide films of slightly different electron density but total film thickness of ca. 5800 Å.
37. Schlomka J.P., Tolan M., Schwalowsky L., Seeck O.H., Stettner J., and Press W. Phys. Rev. B 51 (1995) 2311
38. Holý V., Pietsch U., and Baumbach T. High-Resolution X-ray Scattering from Thin Films and Multilayers (1999), Springer Berlin, Heidelberg, New York
39. We note that this β values arise under the present specific sputtering conditions employed in this study, but is not necessarily universal. We rather expect it to change with sputtering power, geometry, argon gas pressure and other experimental parameters.