Ultralow-voltage electric double-layer SnO2 nanowire transistors gated by microporous SiO2-based solid electrolyte

Journal of Physical Chemistry C

Volumn 114, Issue 28, 2010, Pages 12316-12319

  Liu, Huixuan ^a,b   Sun, Jia ^a,b   Tang, Qingxin ^a,b   Wan, Qing ^a,b  

^a HUNAN UNIVERSITY   (China)

^b NINGBO INSTITUTE OF MATERIALS TECHNOLOGY AND ENGINEERING   (China)

Author keywords

[No Author keywords available]

Indexed keywords

DOUBLE LAYERS; DOUBLE-LAYER CAPACITANCE; FIELD-EFFECT; LOW-VOLTAGE; MICROPOROUS; NANOSCALE SENSORS; NANOWIRE DEVICES; NANOWIRE FET; NANOWIRE TRANSISTORS; ON/OFF RATIO; OPERATION VOLTAGE; ROOM TEMPERATURE; SB-DOPED SNO; SHADOW MASK; SUBTHRESHOLD SLOPE; ULTRA-LOW-VOLTAGE;

ELECTRIC WIRE; ELECTROCHEMICAL ELECTRODES; ELECTRON MOBILITY; GATE DIELECTRICS; GATES (TRANSISTOR); MESFET DEVICES; MICROPOROSITY; NANOWIRES; SILICON COMPOUNDS; SOLID ELECTROLYTES;

FIELD EFFECT TRANSISTORS;

EID: 77954732129     PISSN: 19327447     EISSN: 19327455     Source Type: Journal    
DOI: 10.1021/jp1018789     Document Type: Article

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