Bandgap engineering by substitution of S by Se in nanostructured ZnS 1-xSex thin films grown by soft chemical route for nontoxic optoelectronic device applications

Journal of Alloys and Compounds

Volumn 509, Issue 18, 2011, Pages 5525-5531

  Sadekar, Harishchandra K ^a,b   Ghule, Anil Vithal ^a   Sharma, Ramphal ^a  

^a DR BABASAHEB AMBEDKAR MARATHWADA UNIVERSITY   (India)

^b Arts Commerce and Science College   (India)

Author keywords

Atomic force microscopy (AFM); Chemical synthesis; Crystal structure; Optoelectronic property; Semiconductor; Thin films

Indexed keywords

AFM IMAGE; AS-DEPOSITED FILMS; ATOMIC CONCENTRATION; BAND GAP ENGINEERING; BAND GAPS; BATH TEMPERATURES; BLENDED STRUCTURES; CDS; CHEMICAL SYNTHESIS; ELECTRICAL PROPERTY; ENERGY DISPERSIVE X-RAY; ENVIRONMENT-FRIENDLY ALTERNATIVES; GLASS SUBSTRATES; GROWTH PARAMETERS; NANO-STRUCTURED; OPTOELECTRONIC DEVICE FABRICATION; OPTOELECTRONIC PROPERTIES; PREFERRED ORIENTATIONS; SEM; SEMICONDUCTOR; SOFT-CHEMICAL ROUTE; TRANSMITTANCE SPECTRA; XRD STUDIES;

ATOMIC FORCE MICROSCOPY; CADMIUM COMPOUNDS; CADMIUM SULFIDE; CRYSTAL ATOMIC STRUCTURE; CRYSTALLITE SIZE; ELECTRIC PROPERTIES; ELECTROOPTICAL DEVICES; ENERGY GAP; OPTOELECTRONIC DEVICES; SCANNING ELECTRON MICROSCOPY; SELENIUM; SEMICONDUCTOR GROWTH; STRUCTURAL PROPERTIES; SUBSTRATES; SULFUR; SURFACE STRUCTURE; SYNTHESIS (CHEMICAL); THIN FILMS; TOXIC MATERIALS; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS; ZINC; ZINC SULFIDE;

SEMICONDUCTING SELENIUM COMPOUNDS;

EID: 79953277870     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jallcom.2011.02.089     Document Type: Review

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