Crystalline structure of ZnSe and ZnSSe epilayers grown on (100)GaAs by metalorganic vapour-phase epitaxy

Journal of Crystal Growth

Volumn 214, Issue , 2000, Pages 187-191

  Lovergine, N ^a   Prete, P ^b   Tapfer, L ^c   Mancini, A M ^a  

^a INFM   (Italy)

^b Ist Stud Nuovi Materiali Per l'E   (Italy)

^c Centro Nazionale per la Ricerca e lo Sviluppo dei Materiali   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

AROMATIC COMPOUNDS; COMPUTER SIMULATION; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; METALLORGANIC VAPOR PHASE EPITAXY; SEMICONDUCTING GALLIUM ARSENIDE; STATISTICAL METHODS; X RAY DIFFRACTION ANALYSIS;

DOUBLE CRYSTAL X RAY DIFFRACTION; STRUCTURAL PARAMETERS;

SEMICONDUCTING ZINC COMPOUNDS;

EID: 0033691841     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(00)00071-3     Document Type: Article

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