Optical properties of ZnSxSe1-x (x < 0.18) random and ordered alloys grown by metalorganic atomic layer epitaxy

Journal of Crystal Growth

Volumn 214, Issue , 2000, Pages 460-464

  Song, J H ^a   Sim, E D ^a   Baek, K S ^a   Chang, S K ^a  

^a Yonsei University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OPTICAL PROPERTIES; SEMICONDUCTING GALLIUM ARSENIDE; SPECTROSCOPY; STRAIN; SULFUR;

DEEP LEVEL EMISSION; DIMETHYLZINC; FULL WIDTH HALF MAXIMUM; PHOTOREFLECTANCE SPECTROSCOPY; POTENTIAL FLUCTUATION;

ZINC ALLOYS;

EID: 0033688237     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(00)00130-5     Document Type: Article

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