Raman study of nitrogen-doped ZnSSe/GaAs epilayers

Thin Solid Films

Volumn 428, Issue 1-2, 2003, Pages 185-189

  Kontos, A G ^a   Raptis, Y S ^a   Strassburg M ^b   Pohl, U W ^b   Bimberg, D ^b  

^a NATIONAL TECHNICAL UNIVERSITY OF ATHENS   (Greece)

^b TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

Author keywords

Chemical vapor deposition (CVD); Heterostructures; Raman scattering; Selenides

Indexed keywords

BAND STRUCTURE; CARRIER CONCENTRATION; CHARGE CARRIERS; CHEMICAL VAPOR DEPOSITION; HETEROJUNCTIONS; INTERFACES (MATERIALS); METALLORGANIC VAPOR PHASE EPITAXY; RAMAN SCATTERING; RAMAN SPECTROSCOPY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DOPING; STOICHIOMETRY; X RAY DIFFRACTION; X RAY SPECTROSCOPY;

EPILAYERS;

SEMICONDUCTING ZINC COMPOUNDS;

EID: 0037457117     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(02)01195-1     Document Type: Conference Paper

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