Gyromagnetic ratio of the compensating donor centre in nitrogen-doped ZnSxSe1-x

Semiconductor Science and Technology

Volumn 15, Issue 2, 2000, Pages 209-213

  Ogata, Ken ichi ^a   Davies, J John ^b   Wolverson, Daniel ^b   Fujita, Shizuo ^a   Fujita, Shigeo ^a  

^a KYOTO UNIVERSITY   (Japan)

^b University of Bath   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

NITROGEN; RAMAN SCATTERING; SEMICONDUCTOR DOPING;

GYROMAGNETIC RATIO;

SEMICONDUCTING ZINC COMPOUNDS;

EID: 0033894288     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/15/2/322     Document Type: Article

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