Influence of growth rate on microstructure and optoelectronic behaviour of ZnS films

Journal of Physics D: Applied Physics

Volumn 40, Issue 17, 2007, Pages 5275-5282

  Prathap, P ^a   Subbaiah, Y P V ^b   Ramakrishna Reddy, K T ^a   Miles, R W ^c  

^a SRI VENKATESWARA UNIVERSITY   (India)

^b Sungkyunkwan University   (South Korea)

^c NORTHUMBRIA UNIVERSITY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; DEPOSITION RATES; ELECTRIC CONDUCTIVITY; MICROSTRUCTURE; NANOCRYSTALLINE MATERIALS; OPACITY; OPTICAL BAND GAPS; OPTOELECTRONIC DEVICES; PHOTOLUMINESCENCE; STOICHIOMETRY; X RAY DIFFRACTION; X RAY PHOTOELECTRON SPECTROSCOPY; ZINC SULFIDE;

CLOSE SPACED EVAPORATION; ELECTRICAL CONDUCTIVITY; OPTICAL ANALYSIS;

THIN FILMS;

EID: 34548677027     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/40/17/039     Document Type: Article

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