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Journal of Alloys and Compounds

Volumn 509, Issue 5, 2011, Pages 2414-2419

Effect of annealing on structural and optoelectronic properties of nanostructured ZnSe thin films

(5) Ashraf, M a Akhtar, S M J a Khan, A F b Ali, Z a Qayyum, A c

a Optics Laboratories (Pakistan)

b PAKISTAN INSTITUTE OF ENGINEERING AND APPLIED SCIENCES (Pakistan)

c PAKISTAN INSTITUTE OF NUCLEAR SCIENCE AND TECHNOLOGY (Pakistan)

Author keywords

Annealing effect; Optical band gap; Refractive index; Semiconductor; ZnSe thin films

Indexed keywords

AFM IMAGE; ANNEALING EFFECTS; ANNEALING TEMPERATURES; AS-DEPOSITED FILMS; CRYSTALLINITIES; CUBIC STRUCTURE; GRAIN SIZE; IN-BAND; IN-VACUUM; NANO-STRUCTURED; OPTICAL ENERGY BAND GAP; OPTOELECTRONIC PROPERTIES; POLYCRYSTALLINE; QUANTUM CONFINEMENT EFFECTS; RMS ROUGHNESS; SEMICONDUCTOR; SODA LIME GLASS SUBSTRATE; XRD STUDIES; ZNSE THIN FILMS;

ANNEALING; ENERGY GAP; LIGHT REFRACTION; OPTICAL BAND GAPS; REFRACTIVE INDEX; REFRACTOMETERS; SUBSTRATES; THERMAL EVAPORATION; THIN FILMS; VACUUM EVAPORATION;

OPTICAL FILMS;

EID: 78651369020 PISSN: 09258388 EISSN: None Source Type: Journal
DOI: 10.1016/j.jallcom.2010.11.032 Document Type: Article

Times cited : (130)

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