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Japanese Journal of Applied Physics

Volumn 49, Issue 3 PART 2, 2010, Pages

Gate bias instability under light irradiation in polycrystalline silicon thin-film transistors

(2) Kitakado, Hidehito a Yasumatsu, Takuto a

a SHARP CORPORATION (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

APPROXIMATE EQUATION; DEPOSITION CONDITIONS; ELECTRON TRAPPING; FIRST ORDER RATE EQUATION; GATE BIAS; GATE INSULATOR; LIGHT IRRADIATIONS; LIGHT-INDUCED DEGRADATION; LIGHT-INDUCED DEGRADATION RATE; POLYCRYSTALLINE SILICON THIN-FILM TRANSISTOR; STRESS TIME; UNDER GATE;

DEGRADATION; ELECTRON TRAPS; IRRADIATION; LIQUID CRYSTAL DISPLAYS; POLYSILICON; SILICON NITRIDE; SILICON OXIDES; THIN FILM TRANSISTORS;

QUALITY CONTROL;

EID: 77952578380 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.1143/JJAP.49.03CA06 Document Type: Article

Times cited : (4)

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