High performance transparent thin film transistors based on indium gallium zinc oxide as the channel material

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2007, Pages 587-590

  Suresh, Arun ^a   Wellenius, Patrick ^a   Muth, John F ^a  

^a North Carolina State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS MATERIALS; ELECTRON DEVICES; GALLIUM; HIGH PERFORMANCE LIQUID CHROMATOGRAPHY; OPTICAL DESIGN; OXIDES; SEMICONDUCTING ZINC COMPOUNDS; THICK FILMS; THIN FILM DEVICES; THIN FILM TRANSISTORS; THIN FILMS; TRANSISTORS; ZINC; ZINC OXIDE;

BIAS STRESS; CHANNEL MATERIALS; ENHANCEMENT MODE; FIELD-EFFECT MOBILITIES; INDIUM GALLIUM ZINC OXIDE; N -CHANNEL; TRANSPARENT THIN FILM TRANSISTORS;

INDIUM;

EID: 50249154830     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2007.4419007     Document Type: Conference Paper

References (10)

1. K. Nomura et al., Nature, vol. 432, pp. 488, 2004.
2. J. F. Wager, Science, vol. 300, pp.1245, 2003.
3. A. Takagi et al., Thin Solid Films, vol. 486, pp. 38, 2005.
4. A. Suresh et al., Thin Solid Films (in press).
5. A. Suresh et al., Applied Physics Letters, vol. 90, 123512, 2007.
6. K. Ryu et al., IEEE Electron Device Letters, vol. 26, pp. 716, 2005.
7. S. Yaginuma et al., Thin Solid Films, vol. 486, pp. 218, 2005.
8. J. Yuan et al., Thin Solid Films, vol. 450, pp. 316, 2004.
9. R. B. M. Cross et al., Applied Physics Letters, vol. 89, 263513, 2006.
10. A. V. Ferris -Prabhu, IEEE Transactions on Electron Devices, vol. ED-24, pp. 524, 1977.