Preparation of the Ge(001) surface towards fabrication of atomic-scale germanium devices

Nanotechnology

Volumn 22, Issue 14, 2011, Pages

  Klesse, W M ^a   Scappucci, G ^a   Capellini, G ^b   Simmons, M Y ^a  

^a UNIVERSITY OF NEW SOUTH WALES   (Australia)

^b ROMA TRE UNIVERSITY   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEAL TREATMENTS; ATOMIC SCALE; ATOMIC TERRACES; ATOMIC-SCALE DEVICES; CHEMICAL REAGENTS; DANGLING-BOND WIRES; DEFECT-FREE; EX SITU; GE SURFACES; GERMANIUM DEVICES; HIGH QUALITY; HOMOEPITAXIAL; IN-SITU; LOW DEFECT DENSITIES; STM IMAGES; SUBSTRATE TEMPERATURE; THERMAL ANNEALS; WET CHEMICAL PROCESS;

ATOMS; CHEMICAL BEAM EPITAXY; DEFECTS; GERMANIUM; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; SCANNING TUNNELING MICROSCOPY; SOIL CONSERVATION;

SURFACE MORPHOLOGY;

EID: 79952689657     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/22/14/145604     Document Type: Article

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