Processing of an atomically smooth Ge(001) surface on a large scale

Nanotechnology

Volumn 17, Issue 9, 2006, Pages 2396-2398

  Qin, Zhihui ^a   Shi, Dongxia ^a   Ji, Wei ^a   Pan, Shijin ^a   Gao, Hong Jun ^a  

^a INSTITUTE OF PHYSICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTAL DEFECTS; DEPOSITION; DIMERS; GERMANIUM; ION BOMBARDMENT; MONOLAYERS; SCANNING TUNNELING MICROSCOPY;

ANNEALING PROCESSING; DIMER DEFECTS; SUBMONOLAYER;

SURFACE TREATMENT;

EID: 33646165689     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/17/9/054     Document Type: Article

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