Electronic effects induced by single hydrogen atoms on the Ge(001) surface

Journal of Chemical Physics

Volumn 128, Issue 24, 2008, Pages

  Radny, M W ^a   Shah, G A ^a   Smith, P V ^a   Schofield, S R ^a   Curson, N J ^b  

^a UNIVERSITY OF NEWCASTLE   (Australia)

^b UNIVERSITY COLLEGE LONDON   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC PHYSICS; ATOMS; CHEMISORPTION; DANGLING BONDS; DENSITY FUNCTIONAL THEORY; DISCRETE FOURIER TRANSFORMS; ELECTRON TUNNELING; ELECTRONIC PROPERTIES; GERMANIUM; HYDROGEN; LAWS AND LEGISLATION; MICROSCOPIC EXAMINATION; OLIGOMERS; PROBABILITY DENSITY FUNCTION; SCANNING PROBE MICROSCOPY; SCANNING TUNNELING MICROSCOPY; SILICON; STRUCTURAL PROPERTIES; SURFACE CHARGE;

(1 1 0) SURFACE; (P ,P ,T) MEASUREMENTS; (PL) PROPERTIES; AMERICAN INSTITUTE OF PHYSICS (AIP); ATOMIC CONFIGURATIONS; ATOMIC RESOLUTIONS; CHARGE ACCUMULATION; ELECTRONIC EFFECTS; FIRST-PRINCIPLES DENSITY FUNCTIONAL THEORY; HYDROGEN ATOMS; N-TYPE GE; SCANNING TUNNELING MICROSCOPY (STM); SI(0 0 1); SURFACE DENSITIES; UNPAIRED ELECTRONS;

SURFACE PROPERTIES;

EID: 46149121768     PISSN: 00219606     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2938091     Document Type: Article

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