Characterization of Ge22Sb22Te56 and Sb-excess Ge15Sb47Te38 chalcogenide thin films for phase-change memory applications

Journal of Electronic Materials

Volumn 37, Issue 4, 2008, Pages 535-539

  Ryu, Sang Ouk ^a  

^a Dankook University   (South Korea)

Author keywords

Electrical properties; GST; Nucleation; Set reset process

Indexed keywords

ANTIMONY; CHALCOGENIDES; ELECTRIC PROPERTIES; GERMANIUM COMPOUNDS; PHASE CHANGE MEMORY;

CHALCOGENIDE THIN FILMS; SET RESET PROCESS;

THIN FILMS;

EID: 39849089016     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-007-0377-0     Document Type: Article

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