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Journal of Applied Physics

Volumn 109, Issue 4, 2011, Pages

Ab initio study on influence of dopants on crystalline and amorphous Ge2Sb2Te5

(5) Cho, Eunae a Han, Seungwu a Kim, Dohyung b Horii, Hideki b Nam, Ho Seok c

a Seoul National University (South Korea)

b SAMSUNG Electronics (South Korea)

c Kookmin University (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

AB INITIO CALCULATIONS; AB INITIO STUDY; AMORPHOUS PHASE; AMORPHOUS STRUCTURES; ATOMIC LEVELS; BONDING NATURE; COVALENT CHARACTER; CRYSTALLINE PHASE; CRYSTALLINE STATE; CRYSTALLIZATION PROCESS; HOST ATOMS; INTERSTITIAL POSITIONS; LATTICE PARAMETERS; MATERIAL PROPERTY; MELT-QUENCH; RECRYSTALLIZATIONS;

ANTIMONY; ATOMS; BOND STRENGTH (CHEMICAL); CHEMICAL STABILITY; CRYSTAL ATOMIC STRUCTURE; CRYSTALLINE MATERIALS; ELECTRONIC DENSITY OF STATES; ELECTRONIC STRUCTURE; GERMANIUM; QUANTUM CHEMISTRY; TELLURIUM COMPOUNDS;

DOPING (ADDITIVES);

EID: 79952141702 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3553851 Document Type: Article

Times cited : (54)

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