Investigation of phase transition of Ge2 Sb2 Te5 and N-incorporated Ge2 Sb2 Te5 films using x-ray absorption spectroscopy

Applied Physics Letters

Volumn 92, Issue 6, 2008, Pages

  Kim, Youngkuk ^a   Jang, M H ^a   Jeong, K ^a   Cho, M H ^a,c   Do, K H ^a   Ko, D H ^a   Sohn, H C ^a   Kim, Min Gyu ^b  

^a Yonsei University   (South Korea)

^b Pohang University of Science and Technology (POSTECH)   (South Korea)

^c SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION SPECTROSCOPY; ELECTRONIC STRUCTURE; PHASE CHANGE MATERIALS; PHASE TRANSITIONS;

OCTAHEDRAL COORDINATION; X-RAY ABSORPTION NEAR-EDGE STRUCTURE;

METALLIC FILMS;

EID: 39349102709     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2844878     Document Type: Article

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