Influence of silicon doping on the properties of sputtered Ge2Sb2Te5 thin film

Japanese Journal of Applied Physics

Volumn 48, Issue 4, 2009, Pages

  Lee, Hong Lim ^b   Jeong, Seong Min ^a   Kim, Kyung Ho ^b   Choi, Soon Mok ^a  

^a Korea Institute of Ceramic Engineering and Technology (KICET)   (South Korea)

^b Yonsei University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CANDIDATE MATERIALS; CRYSTAL FRACTION; CRYSTALLIZATION TEMPERATURE; DEVICE OPERATIONS; ELECTRICAL PROPERTY; ELECTRONIC DEVICE; GE2SB2TE5; IN-SITU MEASUREMENT; INTERSTITIAL SITES; KEY FACTORS; MEMORY DEVICE; POWER CONSUMPTION; SI-DOPING; SILICON DOPING; THERMAL STABILITY; WORKING EFFICIENCY;

CRYSTAL STRUCTURE; CRYSTALLIZATION; DOPING (ADDITIVES); ELECTRIC POWER UTILIZATION; ELECTRIC PROPERTIES; ELECTRON DEVICES; GERMANIUM; SILICON; TELLURIUM COMPOUNDS; THERMODYNAMIC STABILITY; THIN FILM DEVICES; THIN FILMS; X RAY DIFFRACTION ANALYSIS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 67849090448     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.48.045503     Document Type: Article

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