A study on the crystallization behavior of nitrogen doped Ge 2Sb2Te5 thin film

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 44, Issue 1-7, 2005, Pages

  Kim, Suk Min ^a   Jun, Jin Hyung ^a   Choi, Doo Jin ^a   Hong, Suk Kyoung ^a   Park, Young Jin ^b  

^a Yonsei University   (South Korea)

^b Hynix Semiconductor Inc   (South Korea)

Author keywords

Ge2Sb2Te5 film; Mapping; Nitrogen doping; Transmission electron microscopy

Indexed keywords

ANNEALING; CRYSTALLIZATION; DOPING (ADDITIVES); GERMANIUM COMPOUNDS; GRAIN BOUNDARIES; LATTICE CONSTANTS; MAGNETRON SPUTTERING; MAPPING; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

CRYSTALLIZED FILMS; GE2SB2TE5 FILM; NITROGEN DOPING; THERMAL HEATING;

THIN FILMS;

EID: 17444422193     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.44.L208     Document Type: Article

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