Observation of molecular nitrogen in N-doped Ge2Sb 2Te5

Applied Physics Letters

Volumn 89, Issue 24, 2006, Pages

  Kim, Kihong ^a   Park, Ju Chul ^a   Chung, Jae Gwan ^a   Song, Se Ahn ^a   Jung, Min Cherl ^b   Lee, Young Mi ^b   Shin, Hyun Joon ^b   Kuh, Bongjin ^c   Ha, Yongho ^c   Noh, Jin Seo ^a  

^a Samsung Advanced Institute of Technology (SAIT)   (South Korea)

^b Pohang University of Science and Technology (POSTECH)   (South Korea)

^c SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION SPECTROSCOPY; CONDUCTIVE FILMS; DOPING (ADDITIVES); GRAIN BOUNDARIES; MOLECULAR STRUCTURE; NITROGEN; X RAY ANALYSIS;

MOLECULAR NITROGEN; REACTIVE SPUTTERING METHOD; SHEET RESISTANCE; VACANCY SITES;

CRYSTALLINE MATERIALS;

EID: 33845792978     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2408660     Document Type: Article

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