Effect of N-implantation on the structural and electrical characteristics of Ge2Sb2Te5 phase change film

Thin Solid Films

Volumn 478, Issue 1-2, 2005, Pages 49-55

  Liu, Bo ^a   Song, Zhitang ^a   Zhang, Ting ^a   Xia, Jilin ^a   Feng, Songlin ^a   Chen, Bomy ^b  

^a Shanghai Inst of Microsystem and Information System   (China)

^b SILICON STORAGE TECHNOLOGY INC   (United States)

Author keywords

Ge2Sb2Te5; N implantation; Sheet resistance; Structure

Indexed keywords

ANNEALING; CHEMICAL BONDS; CRYSTAL STRUCTURE; DOPING (ADDITIVES); GRAIN BOUNDARIES; ION IMPLANTATION; OPTICAL DATA STORAGE; PHASE TRANSITIONS; RAMAN SCATTERING; THIN FILMS; X RAY DIFFRACTION ANALYSIS; X RAY PHOTOELECTRON SPECTROSCOPY;

ANNEALING TEMPERATURE; GRAIN REFINEMENT; N-IMPLANTATION; SHEET RESISTANCE;

GERMANIUM COMPOUNDS;

EID: 14544280966     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2004.09.057     Document Type: Article

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