Influence of Si and N additions on structure and phase stability of Ge 2Sb2Te5 thin films

Journal of Physics Condensed Matter

Volumn 21, Issue 43, 2009, Pages

  Kölpin, Helmut ^a   Music, Denis ^a   Laptyeva, Galyna ^a   Ghadimi, Reza ^a   Merget, Florian ^a   Richter, Silvia ^a   Mykhaylonka, Rusln ^a   Mayer, Joachim ^a   Schneider, Jochen M ^a  

^a RWTH AACHEN UNIVERSITY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

AB INITIO CALCULATIONS; AMORPHOUS MATRICES; BONDING ANALYSIS; CRYSTALLIZATION TEMPERATURE; FINER GRAINS; GRAIN SIZE; SI ADDITION; SPACE GROUPS;

CRYSTALLIZATION; FILM GROWTH; GERMANIUM; PHASE STABILITY; SILICON; TELLURIUM COMPOUNDS; THIN FILMS;

AMORPHOUS SILICON;

EID: 70449553283     PISSN: 09538984     EISSN: 1361648X     Source Type: Journal    
DOI: 10.1088/0953-8984/21/43/435501     Document Type: Article

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