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Volumn 158, Issue 1, 2011, Pages

Development of ALD HfZr Ox with TDEAH/TDEAZ and H2 O

(13) Shi, X a Tielens, H a Takeoka, S a Nakabayashi, T a Nyns, L a Adelmann, C a Delabie, A a Schram, T a Ragnarsson, L a Schaekers, M a Date, L a,b Schreutelkamp, R a,b Van Elshocht, S a

a IMEC (Belgium)

b Applied Materials Belgium (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

COMPLEMENTARY METAL OXIDE SEMICONDUCTOR TRANSISTOR; CRYSTALLINE PHASE; DEPOSITED FILMS; DEVICE PERFORMANCE; EQUIVALENT OXIDE THICKNESS; FILM COMPOSITION; GATE CURRENT; GATE-LEAKAGE CURRENT; INTERFACIAL LAYER; INTERFACIAL OXIDES; POST-DEPOSITION ANNEAL; REACTION CYCLES; RUTHERFORD BACK-SCATTERING; SUBNANOMETERS; TEMPERATURE WINDOW;

AMORPHOUS FILMS; ATOMIC LAYER DEPOSITION; FILM GROWTH; GATES (TRANSISTOR); HAFNIUM; HYDROFLUORIC ACID; LEAKAGE CURRENTS; METALLIC COMPOUNDS; MOS DEVICES; OXIDE FILMS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTOR GROWTH; ZIRCONIUM;

GATE DIELECTRICS;

EID: 79951998316 PISSN: 00134651 EISSN: None Source Type: Journal
DOI: 10.1149/1.3516476 Document Type: Article

Times cited : (14)

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