Study of the reliability impact of chlorine precursor residues in thin atomic-layer-deposited HfO2 layers

IEEE Transactions on Electron Devices

Volumn 54, Issue 4, 2007, Pages 752-758

  Cho, Moonju ^a,b   Degraeve, Robin ^b   Pourtois, Geoffrey ^b   Delabie, Annelies ^b   Ragnarsson, Lars Åke ^b   Kauerauf, Thomas ^b,c   Groeseneken, Guido ^b,c   De Gendt, Stefan ^b,c   Heyns, Marc ^b,c   Hwang, Cheol Seong ^a  

^a Seoul National University   (South Korea)

^b IMEC   (Belgium)

^c UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

Charge trapping; Chlorine; Dielectric breakdown; Dielectric reliability; SiO2 HfO2 dielectric stacks

Indexed keywords

ATOMIC LAYER DEPOSITION; CHARGE TRAPPING; CHLORINE; ELECTRIC BREAKDOWN; FABRICATION; RELIABILITY ANALYSIS; THIN FILMS;

DIELECTRIC RELIABILITY; DIELECTRIC STACK;

HAFNIUM COMPOUNDS;

EID: 34147110989     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2007.892024     Document Type: Article

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