Physical and electrical properties of hafnium-zirconium-oxide films grown by atomic layer deposition

Journal of the Electrochemical Society

Volumn 155, Issue 9, 2008, Pages

  Bang, Seokhwan ^a   Lee, Seungjun ^a   Jeon, Sunyeol ^a   Kwon, Semyung ^a   Jeong, Wooho ^a   Kim, Seokhoon ^a   Jeon, Hyeongtag ^a  

^a Hanyang University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER DEPOSITION; ELECTRIC PROPERTIES; HAFNIUM; HAFNIUM COMPOUNDS; PULSED LASER DEPOSITION; ZIRCONIA; ZIRCONIUM;

ATOMIC LAYER DEPOSITIONS; ELECTRICAL PROPERTIES;

OXIDE FILMS;

EID: 49149107512     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2945908     Document Type: Article

References (20)

1. International Technology Roadmap for Semiconductors, presented at public.itrs.net; 2006.
2. J. Robertson, J. Vac. Sci. Technol. B JVTBD9 0734-211X 10.1116/1.591472, 18, 1785 (2000).
3. Dongwon Shin and Zi-Kui Liu, Scr. Mater. SCMAF7 1359-6462 10.1016/j.scriptamat.2007.04.011, 57, 201 (2007).
4. E. P. Gusev, V. Narayanan, and M. M. Frank, IBM J. Res. Dev. IBMJAE 0018-8646, 50, 4/5 (2006).
5. G. Bersuker, J. H. Sim, C. D. Young, R. Choi, B. H. Lee, P. Lysaght, G. A. Brown, P. M. Zeitzoff, M. Gardner, R. W. Murto, Mater. Res. Soc. Symp. Proc. MRSPDH 0272-9172, 811, 31 (2004).
6. Y. Senzaki, S. Park, H. Chatham, L. Bartholomew, and W. Nieveen, J. Vac. Sci. Technol. A JVTAD6 0734-2101 10.1116/1.1761186, 22, 1775 (2004).
7. W. J. Zhu, T. Tamagawa, M. Gibson, T. Furukawa, and T. P. Ma, IEEE Electron Device Lett. EDLEDZ 0741-3106 10.1109/LED.2002.805000, 23, 649 (2002).
8. D. H. Triyoso, R. I. Hegde, S. Zollner, M. E. Ramon, S. Kalpat, R. Gregory, X.-D. Wang, J. Jiang, M. Raymond, R. Rai, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.2030407, 98, 054104 (2005).
9. C. Zhao, T. Witters, P. Breimer, J. Maes, M. Caymax, and S. De Gendt, Microelectron. Eng. MIENEF 0167-9317 10.1016/j.mee.2006.07.003, 84, 7 (2007).
10. N. Awaji, S. Ohkubo, T. Nakanishi, Y. Sugita, K. Takasaki, and S. Komiya, Jpn. J. Appl. Phys., Part 1 JAPNDE 0021-4922 10.1143/JJAP.35.L67, 35, L67 (1996).
11. R. I. Hegde, D. H. Triyoso, S. B. Samavedam, and B. E. White Jr., J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.2716399, 101, 074113 (2007).
12. Binary Alloy Phase Diagrams, 2nd ed., T. B. Massalski, Editor, Vol. 2, pp. 2097, 2940, ASM Int., Materials Park, OH (1990).
13. C. M. Scanlan, M. Gajdardziska-Josifovska, and C. R. Aita, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.111220, 64, 3548 (1994).
14. C. R. Aita, M. D. Wiggins, R. Whig, and C. M. Scanlan, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.360902, 79, 1176 (1996).
15. M.-H. Cho, Y. S. Roh, C. N. Whang, and K. Jeong, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1487923, 81, 472 (2002).
16. H. Kim, K. C. Saraswat, and P. C. McIntyre, J. Mater. Res. JMREEE 0884-2914, 20, 11 (2005).
17. U. Brossmann, R. Wurschum, U. Sodervall, and H.-E. Schaefer, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.370567, 85, 7646 (1999).
18. X. Zhao and D. Vanderbilt, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.65.075105, 65, 075105 (2002).
19. X. Zhao and D. Vanderbilt, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.65.233106, 65, 233106 (2002).
20. R. Ruh, H. J. Garrett, R. F. Domagala, and N. M. Tallan, J. Am. Ceram. Soc. JACTAW 0002-7820 10.1111/j.1151-2916.1968.tb11822.x, 51, 23 (1968).