Physical and electrical properties of atomic-layer-deposited Hfx Zr1-x O2 with TEMAHf, TEMAZr, and ozone

Journal of the Electrochemical Society

Volumn 155, Issue 1, 2008, Pages

  Triyoso, D H ^a   Gregory, R ^c   Park, M ^b   Wang, K ^b   Lee, S I ^b  

^a FREESCALE SEMICONDUCTOR INC   (United States)

^b Vesta Technology   (United States)

^c NONE

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC PROPERTIES; LEAKAGE CURRENTS; PHASE STABILITY; RAPID THERMAL ANNEALING; THRESHOLD VOLTAGE; TRANSISTORS;

CAPACITANCE-VOLTAGE CHARACTERISTICS; FILM DENSITIES; HIGH-TEMPERATURE ANNEALING; LAYER THICKNESS;

HAFNIUM COMPOUNDS;

EID: 36448976255     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2803427     Document Type: Article

References (14)

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