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Volumn 98, Issue 6, 2011, Pages

Atomic-scale origins of bias-temperature instabilities in SiC-SiO 2 structures

(8) Shen, Xiao a Zhang, En Xia b Zhang, Cher Xuan b Fleetwood, Daniel M a,b Schrimpf, Ronald D b Dhar, Sarit c Ryu, Sei Hyung c Pantelides, Sokrates T a,b

a VANDERBILT UNIVERSITY (United States)

b VANDERBILT UNIVERSITY (United States)

c Arkansas Power Electronics International Inc (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC SCALE; ATOMIC-SCALE MECHANISMS; BIAS STRESS; BIAS TEMPERATURE INSTABILITY; DEEP DOPANT; DOPANT IONIZATION ENERGY; HOLE CAPTURE; METAL-OXIDE-SEMICONDUCTOR CAPACITORS; P-TYPE;

ACTIVATION ENERGY; DOPING (ADDITIVES); SEMICONDUCTING SILICON; SILICON CARBIDE;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 79951806544 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3554428 Document Type: Article

Times cited : (33)

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