Ionization energies of phosphorus and nitrogen donors and aluminum acceptors in 4H silicon carbide from the donor-acceptor pair emission

Physical Review B - Condensed Matter and Materials Physics

Volumn 71, Issue 24, 2005, Pages

  Ivanov, I G ^a   Henry, A ^a   Janzen E ^a  

^a LINKÖPING UNIVERSITY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 28244454588     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.71.241201     Document Type: Article

References (11)

1. For a recent review, see M. Laube, in Silicon Carbide: Recent Major Advances, edited by, W. J. Choyke,,, H. Matsunami,, and, G. Pensl, (Springer-Verlag, Berlin, 2004), p. 493, and references therein.
2. A. Henry and E. Janzén, in Proceedings of the 5th European Conference on Silicon Carbide and Related Materials 2004, edited by, R. Nipoti,,, A. Poggi,, and, A. Scorzoni, (Trans Tech Publications, Switzerland, 2005), p. 101.
3. R. Wang, I. B. Bhat, and T. P. Chow, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.1516257 92, 7587 (2002).
4. N. T. Son, A. Henry, J. Isoya, and E. Janzén, Mater. Sci. Forum MSFOEP 0255-5476 483-485, 515 (2005);
5. N. T. Son, private communication.
6. I. G. Ivanov, B. Magnusson, and I. Janzén, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.67.165211 67, 165211 (2003).
7. I. G. Ivanov, B. Magnusson, and E. Janzén, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.67.165212 67, 165212 (2003).
8. A. Gali, P. Deák, P. R. Briddon, R. P. Devaty, and W. J. Choyke, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.61.12602 61, 12602 (2000).
9. E. Rauls, U. Gerstmann, Th. Frauenheim, and H. Overhof, Physica B PHYBE3 0921-4526 340-342, 184 (2003).
10. M. Ikeda, H. Matsunami, and T. Tanaka, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.22.2842 22, 2842 (1980).
11. M. Bockstedte, A. Mattausch, and O. Pankratov, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1769075 85, 58 (2004).