Analytical threshold voltage model for lightly doped short-channel tri-gate MOSFETs

Solid-State Electronics

Volumn 57, Issue 1, 2011, Pages 31-34

  Tsormpatzoglou, A ^a   Tassis, D H ^a   Dimitriadis, C A ^a   Ghibaudo, G ^b   Collaert, N ^c   Pananakakis, G ^b  

^a ARISTOTLE UNIVERSITY OF THESSALONIKI   (Greece)

^b MINATEC   (France)

^c IMEC   (Belgium)

Author keywords

Analytical threshold voltage model; DIBL; Lightly doped; Tri gate MOSFETs

Indexed keywords

ANALYTICAL THRESHOLD VOLTAGE MODEL; CHANNEL LENGTH; DIBL; DOUBLE GATE MOSFET; FIN WIDTHS; FINFETS; LIGHTLY DOPED; MOSFETS; SIMULATION RESULT; TRIGATE;

LEAKAGE CURRENTS; MOSFET DEVICES; THRESHOLD VOLTAGE;

COMPUTER SIMULATION;

EID: 79951680842     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2010.10.022     Document Type: Article

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