Analytical threshold voltage model with TCAD simulation verification for design and evaluation of tri-gate MOSFETs

Solid-State Electronics

Volumn 51, Issue 3, 2007, Pages 347-353

  Jin, Yawei ^a   Zeng, Chang ^a   Ma, Lei ^a   Barlage, Doug ^a  

^a North Carolina State University   (United States)

Author keywords

Analytical models; Device modeling; Double gate; FinFET; Inversion; MOSFET; TCAD simulation; Threshold voltage; Tri gate; Triple gate; Undoped

Indexed keywords

EID: 33947700465     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2007.01.023     Document Type: Letter

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