Shift and ratio method revisited: Extraction of the fin width in multi-gate devices

Solid-State Electronics

Volumn 49, Issue 5, 2005, Pages 763-768

  Collaert, N ^a   Dixit, A ^a,b   Anil, K G ^a   Rooyackers, R ^a   Veloso, A ^a   De Meyer, K ^a,b  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

Fin width; FINFET; Shift and ratio

Indexed keywords

CAPACITANCE; CRYSTAL ORIENTATION; ELECTRIC CONDUCTIVITY; ELECTRIC CURRENTS; ELECTRIC RESISTANCE; MATHEMATICAL MODELS; MOSFET DEVICES; THRESHOLD VOLTAGE;

FIN WIDTHS; GATE-ALL-AROUND (GAA) DEVICES; MULTI-GATE DEVICES; SHORT CHANNEL EFFECTS (SCE);

GATES (TRANSISTOR);

EID: 14844334212     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2004.10.013     Document Type: Conference Paper

References (7)

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