Three-dimensional closed-form model for potential barrier in undoped FinFETs resulting in analytical equations for VT and subthreshold slope

IEEE Transactions on Electron Devices

Volumn 55, Issue 12, 2008, Pages 3467-3475

  Kloes, Alexander ^a   Weidemann, Michaela ^a   Goebel, Daniel ^b   Bosworth, Bryan T ^c  

^a TECHNISCHE HOCHSCHULE MITTELHESSEN   (Germany)

^b LTi Drives GmbH   (Germany)

^c Princeton University   (United States)

Author keywords

Conformal mapping; FinFET; Modeling; MOSFET; Potential; Threshold voltage; Trigate

Indexed keywords

CONFORMAL MAPPING; FIELD EFFECT TRANSISTORS; MESFET DEVICES; MOSFET DEVICES; NANOSTRUCTURED MATERIALS; NANOTECHNOLOGY; NUCLEAR PHYSICS; THRESHOLD VOLTAGE;

FINFET; MODELING; MOSFET; POTENTIAL; TRIGATE;

THREE DIMENSIONAL;

EID: 57149147973     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2008.2006535     Document Type: Article

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