Analytical current equation for short channel SOI multigate FETs including 3D effects

Solid-State Electronics

Volumn 54, Issue 11, 2010, Pages 1408-1415

  Kloes, Alexander ^a   Weidemann, Michaela ^a   Schwarz, Mike ^a  

^a TECHNISCHE HOCHSCHULE MITTELHESSEN   (Germany)

Author keywords

Compact model; Drain current model; FinFET; MOSFET; Multigate; Short channel; Three dimensional; Transconductance; Triple gate

Indexed keywords

COMPACT MODEL; FINFET; MOS-FET; MULTIGATE; SHORT CHANNELS; TRIPLE-GATE;

DRAIN CURRENT; FIELD EFFECT TRANSISTORS; INTEGRATED CIRCUITS; MESFET DEVICES; MOSFET DEVICES; NUMERICAL ANALYSIS; SEMICONDUCTING ALUMINUM COMPOUNDS; THRESHOLD VOLTAGE; TRANSCONDUCTANCE;

THREE DIMENSIONAL;

EID: 77955661583     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2010.04.047     Document Type: Article

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