Effect of substrate miscut on the direct growth of semipolar (101̄1̄) GaN on (100) MgAl2O4 by metalorganic chemical vapor deposition

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 45, Issue 20-23, 2006, Pages

  Kaeding, John F ^a   Iza, Michael ^a   Sato, Hitoshi ^a   DenBaars, Steven P ^a   Speck, James S ^a   Nakamura, Shuji ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

GaN; Heteroepitaxy; MOCVD; Semipolar; Substrate miscut; X ray rocking curve

Indexed keywords

COALESCENCE; EPITAXIAL GROWTH; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTOR GROWTH; SUBSTRATES;

HETEROEPITAXY; SEMIPOLAR; SUBSTRATE MISCUT; X-RAY ROCKING CURVE;

GALLIUM NITRIDE;

EID: 33745311780     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.45.L536     Document Type: Article

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