Sapphire substrate misorientation effects on GaN nucleation layer properties

Journal of Crystal Growth

Volumn 272, Issue 1-4 SPEC. ISS., 2004, Pages 353-359

  Lu, D ^a,b   Florescu, D I ^a   Lee, D S ^a   Merai, V ^a   Ramer, J C ^a   Parekh, A ^a   Armour, E A ^a  

^a Veeco Compound Semiconductor Inc   (United States)

^b Department of Electrical and Computer Engineering   (United States)

Author keywords

A3. Metalorganic chemical vapor deposition; A3. Quantum wells; B1. Nitrides

Indexed keywords

ELECTROLUMINESCENCE; FIELD EFFECT TRANSISTORS; LIGHT EMITTING DIODES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOLUMINESCENCE; SAPPHIRE; SEMICONDUCTOR LASERS; SEMICONDUCTOR QUANTUM WELLS; X RAY DIFFRACTION ANALYSIS;

DISLOCATION DENSITY; OCEAN-OPTICS SPECTROMETER; SAPPHIRE SUBSTRATE;

GALLIUM NITRIDE;

EID: 9944226120     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2004.08.113     Document Type: Conference Paper

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